Part Number Hot Search : 
HT82M23B LM317 ST19WSC8 ON0465 CZRA4756 IRLB3034 IL26X 80C55
Product Description
Full Text Search
 

To Download MHL18336N Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
  ar c hive inf o rmati o n archive information MHL18336N 1 rf device data freescale semiconductor pcs band rf linear ldmos amplifier designed for ultra - linear amplifier applications in 50 ohm system s operating in the pcs frequency band. a silicon fet class a design provides outstanding linearity and gain. in addition, the excellent group delay and phase linearity characteristics are ideal for digital modulation systems, such as tdma and cdma. ? third order intercept: 46 dbm typ ? power gain: 30 db typ (@ f =1850 mhz) ? input vswr  1.5:1 features ? excellent phase linearity and group delay characteristics ? ideal for feedforward base station applications ? replaced mhl18336. there are no form, fit or function changes with this part replacement. ? n suffix indicates lead - free terminations table 1. absolute maximum ratings (t c = 25 c unless otherwise noted) rating symbol value unit dc supply voltage v dd 30 vdc rf input power p in +10 dbm storage temperature range t stg - 40 to +100 c operating case temperature range t c - 20 to +100 c table 2. electrical characteristics (v dd = 26 vdc, t c = 25 c; 50 system) characteristic symbol min typ max unit supply current i dd ? 500 525 ma power gain (f =1850 mhz) g p 29.5 30 32.5 db gain flatness (f = 1800 - 1900 mhz) g f ? 0.2 0.4 db power output @ 1 db compression (f = 1850 mhz) p1db 35 36 ? dbm third order intercept (f1 = 1847 mhz, f2 = 1852 mhz) ito 45 46 ? dbm noise figure (f = 1850 mhz) nf ? 4.2 4.5 db note - caution - mos devices are susceptible to damage from electrostatic charge. reasonable precautions in handling and packaging mos devices should be observed. document number: MHL18336N rev. 5, 8/2006 freescale semiconductor technical data MHL18336N 1800 - 1900 mhz 4 w, 30 db rf linear ldmos amplifier case 301ap - 02, style 1 ? freescale semiconductor, inc., 2006. all rights reserved.
ar c hive inf o rmati o n archive information 2 rf device data freescale semiconductor MHL18336N package dimensions notes: 1. interpret dimensions and tolerances per asme y14.5m, 1994. 2. controlling dimension: inch. 3. dimension "f" to center of leads. style 1: pin 1. rf input 2. vdd1 3. vdd2 4. rf output case: ground g w n l h r k j a m 0.020 (0.51) t m m 0.020 (0.51) t 12 34 f e c seating plane dim min max min max millimeters inches a 1.760 1.780 44.70 b 1.370 1.390 34.80 35.31 c 0.245 0.265 6.22 6.73 d 0.017 0.023 0.43 0.58 e 0.080 0.100 2.03 2.54 f 0.086 bsc 2.18 bsc g 1.650 bsc 41.91 bsc h 1.290 bsc 32.77 bsc j 0.266 0.280 6.76 7.11 k 0.125 0.165 3.18 4.19 l 0.990 bsc 25.15 bsc 0.390 bsc 9.91 bsc n p 0.118 0.132 3.00 3.35 q r 0.535 0.555 13.59 14.10 s 0.445 0.465 11.30 11.81 w 45.21 case 301ap - 02 issue e b m 0.020 (0.51) t m m s m 0.008 (0.20) a m t 0.090 bsc 2.29 bsc 0.008 0.013 0.20 0.33 d 4x q 2x b a s s a t p 4x
ar c hive inf o rmati o n archive information MHL18336N 3 rf device data freescale semiconductor information in this document is provided solely to enable system and software implementers to use freescale semiconductor products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. freescale semiconductor reserves the right to make changes without further notice to any products herein. freescale semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does freescale semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ?typical? parameters that may be provided in freescale semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typicals?, must be validated for each customer application by customer?s technical experts. freescale semiconductor does not convey any license under its patent rights nor the rights of others. freescale semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the freescale semiconductor product could create a situation where personal injury or death may occur. should buyer purchase or use freescale semiconductor products for any such unintended or unauthorized application, buyer shall indemnify and hold freescale semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that freescale semiconductor was negligent regarding the design or manufacture of the part. freescale  and the freescale logo are trademarks of freescale semiconductor, inc. all other product or service names are the property of their respective owners. ? freescale semiconductor, inc. 2006. all rights reserved. how to reach us: home page: www.freescale.com e - mail: support@freescale.com usa/europe or locations not listed: freescale semiconductor technical information center, ch370 1300 n. alma school road chandler, arizona 85224 +1 - 800 - 521 - 6274 or +1 - 480 - 768 - 2130 support@freescale.com europe, middle east, and africa: freescale halbleiter deutschland gmbh technical information center schatzbogen 7 81829 muenchen, germany +44 1296 380 456 (english) +46 8 52200080 (english) +49 89 92103 559 (german) +33 1 69 35 48 48 (french) support@freescale.com japan: freescale semiconductor japan ltd. headquarters arco tower 15f 1 - 8 - 1, shimo - meguro, meguro - ku, tokyo 153 - 0064 japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com asia/pacific: freescale semiconductor hong kong ltd. technical information center 2 dai king street tai po industrial estate tai po, n.t., hong kong +800 2666 8080 support.asia@freescale.com for literature requests only: freescale semiconductor literature distribution center p.o. box 5405 denver, colorado 80217 1 - 800 - 441 - 2447 or 303 - 675 - 2140 fax: 303 - 675 - 2150 ldcforfreescalesemiconductor@hibbertgroup.com document number: MHL18336N rev. 5, 8/2006


▲Up To Search▲   

 
Price & Availability of MHL18336N

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X